Compositional and Interfacial Modification of Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Prepared by Electrochemical Deposition
- Compositional and Interfacial Modification of Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Prepared by Electrochemical Deposition
- 서세원; 전종옥; 서정우; 유이인; 정증현; 이도권; 김홍곤; 고민재; 손해정; 장호원; 김진영
- bandgap; electrodeposition
- Issue Date
- VOL 9, 439-444
- A highly efficient Cu2 ZnSn(S,Se)4 (CZTSSe)-based thin-film solar cell (9.9 %) was prepared using an electrochemical deposition method followed by thermal annealing. The Cu-Zn-Sn alloy films was grown on a Mo-coated glass substrate using a one-pot electrochemical deposition process, and the metallic precursor films was annealed under a mixed atmosphere of S and Se to form CZTSSe thin films with bandgap energies ranging from 1.0 to 1.2 eV. The compositional modification of the S/(S+Se) ratio shows a trade-off effect between the photocurrent and photovoltage, resulting in an optimum bandgap of roughly 1.14 eV. In addition, the increased S content near the p-n junction reduces the dark current and interface recombination, resulting in a further enhancement of the open-circuit voltage. As a result of the compositional and interfacial modification, the best CZTSSe-based thin-film solar cell exhibits a conversion efficiency of 9.9 %, which is among the highest efficiencies reported so far for electrochemically deposited CZTSSe-based thin-film solar cells.
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