Compositional and Interfacial Modification of Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Prepared by Electrochemical Deposition

Title
Compositional and Interfacial Modification of Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Prepared by Electrochemical Deposition
Authors
서세원전종옥서정우유이인정증현이도권김홍곤고민재손해정장호원김진영
Keywords
bandgap; electrodeposition
Issue Date
2016-03
Publisher
ChemSusChem
Citation
VOL 9, 439-444
Abstract
A highly efficient Cu2 ZnSn(S,Se)4 (CZTSSe)-based thin-film solar cell (9.9 %) was prepared using an electrochemical deposition method followed by thermal annealing. The Cu-Zn-Sn alloy films was grown on a Mo-coated glass substrate using a one-pot electrochemical deposition process, and the metallic precursor films was annealed under a mixed atmosphere of S and Se to form CZTSSe thin films with bandgap energies ranging from 1.0 to 1.2 eV. The compositional modification of the S/(S+Se) ratio shows a trade-off effect between the photocurrent and photovoltage, resulting in an optimum bandgap of roughly 1.14 eV. In addition, the increased S content near the p-n junction reduces the dark current and interface recombination, resulting in a further enhancement of the open-circuit voltage. As a result of the compositional and interfacial modification, the best CZTSSe-based thin-film solar cell exhibits a conversion efficiency of 9.9 %, which is among the highest efficiencies reported so far for electrochemically deposited CZTSSe-based thin-film solar cells.
URI
http://pubs.kist.re.kr/handle/201004/58886
ISSN
18645631
Appears in Collections:
KIST Publication > Article
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