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dc.contributor.author서세원-
dc.contributor.author전종옥-
dc.contributor.author서정우-
dc.contributor.author유이인-
dc.contributor.author정증현-
dc.contributor.author이도권-
dc.contributor.author김홍곤-
dc.contributor.author고민재-
dc.contributor.author손해정-
dc.contributor.author장호원-
dc.contributor.author김진영-
dc.date.accessioned2016-05-11T14:19:04Z-
dc.date.available2016-05-11T14:19:04Z-
dc.date.issued2016-03-
dc.identifier.citationVOL 9, 439-444-
dc.identifier.issn18645631-
dc.identifier.other46545-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/58886-
dc.description.abstractA highly efficient Cu2 ZnSn(S,Se)4 (CZTSSe)-based thin-film solar cell (9.9 %) was prepared using an electrochemical deposition method followed by thermal annealing. The Cu-Zn-Sn alloy films was grown on a Mo-coated glass substrate using a one-pot electrochemical deposition process, and the metallic precursor films was annealed under a mixed atmosphere of S and Se to form CZTSSe thin films with bandgap energies ranging from 1.0 to 1.2 eV. The compositional modification of the S/(S+Se) ratio shows a trade-off effect between the photocurrent and photovoltage, resulting in an optimum bandgap of roughly 1.14 eV. In addition, the increased S content near the p-n junction reduces the dark current and interface recombination, resulting in a further enhancement of the open-circuit voltage. As a result of the compositional and interfacial modification, the best CZTSSe-based thin-film solar cell exhibits a conversion efficiency of 9.9 %, which is among the highest efficiencies reported so far for electrochemically deposited CZTSSe-based thin-film solar cells.-
dc.publisherChemSusChem-
dc.subjectbandgap-
dc.subjectelectrodeposition-
dc.titleCompositional and Interfacial Modification of Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Prepared by Electrochemical Deposition-
dc.typeArticle-
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