Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

Title
Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain
Authors
최원국박민철송진동황도경손동익김지훈이영택유태희김홍희이윤재이희성Seyed Hossein Shokouh이준영남승희주병권임성일
Keywords
PbS quantum dot; InGaZnO Semiconductor; Hybrid Phototransistor; Photo Inverter; Near Infrared Detection/Imaging
Issue Date
2016-01
Publisher
NPG Asia Materials
Citation
VOL 8, e233-1-e233-9
Abstract
Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal oxide semiconductor hybrid phototransistors with a photodetection capability between 700 and 1400 nm, a range that neither conventional Si nor InGaAs photodetectors can cover. The new hybrid phototransistor exhibits excellent photoresponsivity of over 106AW− 1 and a specific detectivity in the order of 1013 Jones for NIR (1000 nm) light. Furthermore, we demonstrate an NIR (1300 nm) imager using photogating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photogain of ~ 4.9 V (~99%). To the best of our knowledge, this report demonstrates the first QD/metal oxide hybrid phototransistor-based flat panel NIR imager. Our hybrid approach using QD/metal oxide paves the way for the development of gate-tunable and highly sensitive flat panel NIR sensors/imagers that can be easily integrated.
URI
http://pubs.kist.re.kr/handle/201004/59118
ISSN
18844049
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KIST Publication > Article
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