Graphene quantum dots as a highly efficient solution-processed charge trapping medium
for organic nano-floating gate memory
- Title
- Graphene quantum dots as a highly efficient solution-processed charge trapping medium
for organic nano-floating gate memory
- Authors
- 김태욱; 이동수; 이상현; 문병준; 배수강; 차안나; 이상아; Yongsung Ji; Juhan Kim; Myung Woo Lee; Jung Sang Suh; Gunuk Wang
- Keywords
- Graphene quantum dots; charge trapping medium; organic nano-floating gate memory
- Issue Date
- 2016-04
- Publisher
- Nanotechnology
- Citation
- VOL 27, NO 14, 145204-1-145204-7
- Abstract
- A highly efficient solution-processible charge trapping medium is a prerequisite to developing high-performance organic nano-floating gate memory (NFGM) devices. Although several candidates for the charge trapping layer have been proposed for organic memory, a method for significantly increasing the density of stored charges in nanoscale layers remains a considerable challenge. Here, solution-processible graphene quantum dots (GQDs) were prepared by a modified thermal plasma jet method; the GQDs were mostly composed of carbon without any serious oxidation, which was confirmed by x-ray photoelectron spectroscopy. These GQDs have multiple energy levels because of their size distribution, and they can be effectively utilized as charge trapping media for organic NFGM applications. The NFGM device exhibited excellent reversible switching characteristics, with an on/off current ratio greater than 10(6), a stable retention time of 10(4) s and reliable cycling endurance over 100 cycles. In particular, we estimated that the GQDs layer trapped ∼7.2 × 10(12) cm(-2) charges per unit area, which is a much higher density than those of other solution-processible nanomaterials, suggesting that the GQDs layer holds promise as a highly efficient nanoscale charge trapping material.
- URI
- http://pubs.kist.re.kr/handle/201004/59131
- ISSN
- 09574484
- Appears in Collections:
- KIST Publication > Article
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