Pilot-scale electron cyclotron resonance-metal organic chemical vapor deposition system for the preparation of large-area fluorine-doped SnO2 thin films
- Pilot-scale electron cyclotron resonance-metal organic chemical vapor deposition system for the preparation of large-area fluorine-doped SnO2 thin films
- 이중기; Bup Ju Jeon; Chairul Hudaya
- SnO2; pilot scale ECR-MOCVD; ITO films; electromagnetic interferefance
- Issue Date
- Journal of vacuum science & technology. A, Vacuum, surfaces, and films : an official journal of the American Vacuum Society
- VOL 34, NO 3, 031501-1-031501-7
- The authors report the surface morphology, optical, electrical, thermal and humidity impacts, and electromagnetic interference properties of fluorine-doped tin oxide (SnO2:F or “FTO”) thin films on a flexible polyethylene terephthalate (PET) substrate fabricated by a pilot-scale electron cyclotron resonance– metal organic chemical vapor deposition (PS ECR-MOCVD). The characteristics of large area FTO thin films were compared with a commercially available transparent conductive electrode made of tin-doped indium oxide (ITO), prepared with an identical film and PET thickness of 125  nm and 188  μm, respectively. The results revealed that the as-prepared FTO thin films exhibited comparable performances with the incumbent ITO films, including a high optical transmittance of 97% (substrate-subtracted), low electrical resistivity of about 5 × 10− 3 Ω cm, improved electrical and optical performances due to the external thermal and humidity impact, and an excellent shielding effectiveness of electromagnetic interference of nearly 2.3  dB. These excellent performances of the FTO thin films were strongly attributed to the design of the PS ECR-MOCVD, which enabled a uniform plasma environment resulting from a proper mixture of electromagnetic profiles and microwave power.
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