High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates

Title
High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates
Authors
김승민이종수권준연Piyush Dak김진희Jozeph Park홍영기송원근Inturu OmkaramMuhammad A. Alam김선국
Keywords
CVD grown; Multilayer MoSe2 Film; High Mobility Transistor
Issue Date
2016-03
Publisher
Advanced materials
Citation
VOL 28, NO 12, 2316-2321
Abstract
Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm2 V− 1 s− 1 and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics.
URI
http://pubs.kist.re.kr/handle/201004/59206
ISSN
09359648
Appears in Collections:
KIST Publication > Article
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