Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

Title
Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode
Authors
김명종조현진Zagarzusem KhurelbaatarYeon-Ho KilKyu-Hwan ShimSung-Nam LeeJae-chan JeongHyobong HongChel-Jong Choi
Keywords
graphene-germanium; diode; Schottky barrier
Issue Date
2016-03
Publisher
Superlattices and microstructures
Citation
VOL 91, 306-312
Abstract
1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.; We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current– voltage (I– V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (ФB), ideality factor (n), and series resistance (Rs), were extracted using the forward I– V and Cheung's methods. The ФB and n extracted from the forward ln(I)– V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the ФB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of ФB calculated from the forward I– V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz&#8211
URI
http://pubs.kist.re.kr/handle/201004/59215
ISSN
07496036
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KIST Publication > Article
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