Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier
- Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier
- 김명종; 조현진; Zagarzusem Khurelbaatar; Yeon-Ho Kil; Kyu-Hwan Shim; Sung-Nam Lee; Jae-chan Jeong; Hyobong Hong; Chel-Jong Choi
- graphene-germanium; diode; Schottky barrier
- Issue Date
- Superlattices and microstructures
- VOL 91, 306-312
- 1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.; We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current– voltage (I– V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (ФB), ideality factor (n), and series resistance (Rs), were extracted using the forward I– V and Cheung's methods. The ФB and n extracted from the forward ln(I)– V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the ФB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of ФB calculated from the forward I– V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz–
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