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dc.contributor.author최원준-
dc.contributor.author김상현-
dc.contributor.author김성광-
dc.contributor.author금대명-
dc.contributor.author이정민-
dc.contributor.author박민수-
dc.contributor.author최성진-
dc.contributor.author김대환-
dc.contributor.author김동명-
dc.date.accessioned2016-06-10T15:30:05Z-
dc.date.available2016-06-10T15:30:05Z-
dc.date.issued2016-04-
dc.identifier.citationVOL 122, 8-12-
dc.identifier.issn00381101-
dc.identifier.other46723-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/59386-
dc.publisherSolid-state electronics-
dc.titleFully subthreshold current-based characterization of interface traps and surface potential in III?V-on-insulator MOSFETs-
dc.typeArticle-
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