Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours

Title
Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours
Authors
박종극김인호정두석임형광블라디미르김구현김도헌Rohit SoniCheol Seong Hwang
Issue Date
2016-09
Publisher
Nanoscale
Citation
VOL 8, NO 34, 15621-15628
Abstract
We present ‘unusual’ resistive switching behaviours in electrochemical metallization (ECM) cells utilizing a dual-layer (SiOx/GeSex: SiOx on GeSex) solid electrolyte (SE). The observed switching behaviour markedly varies with the thickness of the upper SiOx layer and compliance current: (i) monostable switching, (ii) counter-eightwise bipolar switching, and (iii) combination of monostable and eightwise bipolar switching behaviours. Focusing on cases (i) and (iii), electrical and chemical analyses on these chameleonic cells were performed in an attempt to gain clues to the understanding of the observed complexity. The chemical analysis indicated the upper SiOx layer as a chemical potential well for Cu ions— Cu ions were largely confined in the well. This non-uniform distribution of Cu across the SE perhaps hints at the mechanism for the complex behaviour; it may be a ‘zero-sum game’ between SiOx and GeSex layers, in which the two layers fight over the limited number of Cu atoms/ions.
URI
http://pubs.kist.re.kr/handle/201004/59822
ISSN
20403364
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