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dc.contributor.author한석희-
dc.contributor.author장준연-
dc.contributor.author구현철-
dc.contributor.author김형준-
dc.contributor.author박태언-
dc.contributor.author박윤호-
dc.contributor.author남송현-
dc.contributor.authorHae-In Ihm-
dc.date.accessioned2016-09-27T15:30:06Z-
dc.date.available2016-09-27T15:30:06Z-
dc.date.issued2016-10-
dc.identifier.citationVOL 109, 122409-1-122409-5-
dc.identifier.issn00036951-
dc.identifier.other47140-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/59994-
dc.publisherApplied physics letters-
dc.subjectspin accumulation-
dc.subjectFe/GaAs Schottky barriers-
dc.subjectnon local measurement-
dc.subjectthree terminal measurement-
dc.subjectfour terminal measurement-
dc.titleSpin accumulation at in-situ grown Fe/GaAs(100) Schottky barriers measured using the three- and four- terminal methods-
dc.typeArticle-
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