Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes

Title
Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes
Authors
김명종서태훈민정홍최상배김기용이준엽박문도서은경김정렬이동선
Keywords
graphene; current spreading; LED
Issue Date
2016-09
Publisher
Current applied physics
Citation
VOL 16, 1382-1387
URI
http://pubs.kist.re.kr/handle/201004/60024
ISSN
15671739
Appears in Collections:
KIST Publication > Article
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