Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach

Title
Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach
Authors
김용태Ki-Sik ImChul-Ho WonSindhuri VodapallyRaphael CaulmiloneSorin CristoloveanuJung-Hee Lee
Keywords
GaN; Nano-wire; gate all around FET (GAA); GaN on Insulator; Normally off; high performance; High power
Issue Date
2016-10
Publisher
Applied physics letters
Citation
VOL 109, 143106-143109
URI
http://pubs.kist.re.kr/handle/201004/60072
ISSN
00036951
Appears in Collections:
KIST Publication > Article
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