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dc.contributor.author김승철-
dc.contributor.author신민철-
dc.contributor.author이재현-
dc.date.accessioned2017-06-08T15:30:15Z-
dc.date.available2017-06-08T15:30:15Z-
dc.date.issued2017-06-
dc.identifier.citationVOL 110, NO 233110-
dc.identifier.issn00036951-
dc.identifier.other48728-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/60841-
dc.publisherApplied physics letters-
dc.subjectSchottky Barrier-
dc.subjectNanostructure-
dc.subjectDensity Functional Theory-
dc.subjectSimulation-
dc.subjectBand gap-
dc.subjectSBH model-
dc.titleA theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction-
dc.typeArticle-
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