Contact­Engineered Electrical Properties of MoS2 Field­Effect Transistors via Selectively Deposited Thiol­Molecules

Title
Contact­Engineered Electrical Properties of MoS2 Field­Effect Transistors via Selectively Deposited Thiol­Molecules
Authors
정승준조경준박진수김재근강기훈김태영신지원최유리이탁희
Issue Date
2018-03
Publisher
Advanced materials
URI
http://pubs.kist.re.kr/handle/201004/61304
ISSN
09359648
Appears in Collections:
KIST Publication > Article
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