Full metadata record

DC FieldValueLanguage
dc.contributor.author정승준-
dc.contributor.author이소정-
dc.contributor.author김태균-
dc.contributor.author장봉호-
dc.contributor.author이원용-
dc.contributor.author송규찬-
dc.contributor.author김현서-
dc.contributor.author도경엽-
dc.contributor.author황승범-
dc.contributor.author장재원-
dc.date.accessioned2018-04-13T15:30:08Z-
dc.date.available2018-04-13T15:30:08Z-
dc.date.issued2018-03-
dc.identifier.issn07413106-
dc.identifier.other50632-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/61305-
dc.publisherIEEE Electron Device Letters-
dc.titleImpact of Device Area and Film Thickness on Performance of Sol gel Processed ZrO2 RRAM-
dc.typeArticle-
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE