Impact of Ground Plane Doping on InGaAs-OI MOSFETs

Title
Impact of Ground Plane Doping on InGaAs-OI MOSFETs
Authors
최원준송진동김형준김상현김성광김한성금대명심재필김재원김창주최성진김대환김동명
Issue Date
2018-02
Publisher
한국반도체학술대회
URI
http://pubs.kist.re.kr/handle/201004/61502
Appears in Collections:
KIST Publication > Conference Paper
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