Gate-Tunable Memristive Phenomena Mediated by Grain Boundaries in Single-Layer MoS2

Title
Gate-Tunable Memristive Phenomena Mediated by Grain Boundaries in Single-Layer MoS2
Authors
김인수V. K. SangwanD. JariwalaK. -S. ChenT. J. MarksL. J. LauhonM. C. Hersam
Issue Date
2015-05
Publisher
Nature nanotechnology
URI
http://pubs.kist.re.kr/handle/201004/61636
ISSN
17483387
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE