Phase Transition Characteristics and Device Performance of Si-doped Ge2Sb2Te5

Title
Phase Transition Characteristics and Device Performance of Si-doped Ge2Sb2Te5
Authors
김인수S. J. ParkS. K. KimS. M. YoonB. G. YuS. Y. Choi
Issue Date
2008-08
Publisher
Semiconductor science and technology
URI
http://pubs.kist.re.kr/handle/201004/61651
ISSN
02681242
Appears in Collections:
KIST Publication > Article
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