High-Performance Black Phosphorus Top-Gate Ferroelectric Transistor for Nonvolatile Memory Applications

Title
High-Performance Black Phosphorus Top-Gate Ferroelectric Transistor for Nonvolatile Memory Applications
Authors
최원국황도경이영택
Keywords
Black Phosphorus (BP); Ferroelectric field-effect transistor (FeFET); Nonvolatile memory
Issue Date
2016-10
Publisher
Journal of the Korean Physical Society
Citation
VOL 69, NO 8-1351
Abstract
Two-dimensional (2D) van der Waals (vdW) atomic crystals have been extensively studied and significant progress has been made. The newest 2D vdW material, called black phosphorus (BP), has attracted considerable attention due to its unique physical properties, such as its being a singlecomponent material like graphene, and its having a high mobility and direct band gap. Here, we report on a high-performance BP nanosheet based ferroelectric field effect transistor (FeFET) with a poly(vinylidenefluoride-trifluoroethylene) top-gate insulator for a nonvolatile memory application. The BP FeFETs show the highest linear hole mobility of 563 cm2/Vs and a clear memory window of more than 15 V. For more advanced nonvolatile memory circuit applications, two different types of resistive-load and complementary ferroelectric memory inverters were implemented, which showed distinct memory on/off switching characteristics.
URI
http://pubs.kist.re.kr/handle/201004/64788
ISSN
0374-4884
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KIST Publication > Article
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