Single-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes

Title
Single-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes
Authors
김민수전동환정해용김영조신찬수박경호박원규김상인문성욱한상욱
Keywords
Photodiodes; III-V materials; diffusion
Issue Date
2016-10
Publisher
Journal of the Korean Physical Society
Citation
VOL 69, NO 8-1346
Abstract
In this paper, a p-type diffusion process based literally on single-step metal-organic vapor-phase diffusion (MOVPD) employing diethyl zinc as the diffusion source in combination with the recessetching technique is developed to improve the dark-current characteristics of planar-type avalanche photodiodes (APDs). The developed single-step MOVPD process exhibits on excellent linear relationship between the diffusion depth and the square root of the diffusion time, which mainly results from maintaining constant source diffusion. The single-step MOVPD process without any additional thermal activation process achieves a surface doping concentration of 1.9 × 1018 cm -3, which is sufficient to form ohmic contact. The measured diffusion profiles of the APDs clearly reveal the presence of a two-dimensional diffusion front formed by the recess-etched and guard-ring regions. The impact of this p-type diffusion process on the performance of the APD devices has also been demonstrated by exhibiting improved dark-current characteristics for the fabricated APDs.
URI
http://pubs.kist.re.kr/handle/201004/64802
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
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