Correct Extraction of Frequency Dispersion in Accumulation Capacitance in InGaAs Metal-Insulator-Semiconductor Devices

Title
Correct Extraction of Frequency Dispersion in Accumulation Capacitance in InGaAs Metal-Insulator-Semiconductor Devices
Authors
송진동최정혜김성근조철진이우철Cheol Seong Hwang
Keywords
InGaAs; Frequency-dispersion; MOS capacitors; parasitic inductance
Issue Date
2016-11
Publisher
Electronic materials letters
Citation
VOL 12, NO 6-772
Abstract
The anomalous frequency dispersion of the accumulation capacitance, i.e. an increase in the accumulation capacitance at high frequencies, of Pt/Al2O3/InGaAs metal-oxide-semiconductor (MOS) capacitors was investigated in this study. The anomalous frequency dispersion can be attributed to the considerable effects of parasitic inductance at high frequencies. The effects of parasitic inductance were effectively suppressed by decreasing the capacitor area without changing the MOS structure. This suggests that a smaller capacitor area should be used to precisely characterize the capacitance-voltage behavior of InGaAs-based MOS devices.
URI
http://pubs.kist.re.kr/handle/201004/64829
ISSN
1738-8090
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE