Structural and Electrical Properties of EOT HfO2 (< 1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability
- Structural and Electrical Properties of EOT HfO2 (< 1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability
- 송진동; 강항규; Yu-Seon Kang; Dae-Kyoung Kim; Kwang-Sik Jeong; Min Baik; Youngseo An; Hyoungsub Kim; Mann-Ho Cho
- HfO2; InAs; ALD; Thermal stability
- Issue Date
- ACS Applied Materials & Interfaces
- VOL 8, NO 11-7498
- We report on-changes in the structural, interfacial, and electrical characteristics of sub-1 nm equivalent oxide thickness (EOT) HfO2 grown on InAs by atomic layer deposition. When the HfO2 film was deposited on an InAs substrate at a temperature of 300 degrees C, the HfO2 was in an amorphous phase with an sharp interface, an EOT of 0.9 nm, and low preexisting interfacial defect states. During post deposition annealing (PDA) at 600 degrees C, the HfO2 was transformed from an amorphous to a single crystalline orthorhombic phase, which minimizes the interfacial lattice mismatch below 0.8%. Accordingly, the HfO2 dielectric after the PDA had a dielectric constant of similar to 24 because of the permittivity of the well-ordered orthorhombic HfO2 structure. Moreover, border traps were reduced by half than the as-grown sample due to a reduction in bulk defects in HfO2 dielectric during the PDA. However, in terms of other electrical properties, the characteristics of the PDA-treated sample were degraded compared to the as-grown sample, with EOT values of 1.0 run and larger interfacial defect states (D-it) above 1 x 10(14) cm(-2) eV(-1). X-ray photoelectron spectroscopy data indicated that the diffusion of In atoms from the InAs substrate into the HfO2 dielectric during the PDA at 600 degrees C resulted in the development of substantial midgap states
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