Memory characteristics of capacitors with poly-GaAs floating gates

Title
Memory characteristics of capacitors with poly-GaAs floating gates
Authors
송진동노일표Kang, N. S.Shin, S. H.Oh, Y. T.Kim, K. B.Y.H. Song
Keywords
GaAs; Glass; Memory; poly-crystal; capacitor
Issue Date
2016-05
Publisher
Electronics letters
Citation
VOL 52, NO 11-964
Abstract
The memory characteristics of a capacitor with polycrystalline gallium arsenide (poly-GaAs) as a floating gate material have been evaluated, and compared with a capacitor using poly-silicon (poly-Si). The poly-GaAs film with thickness of 100 nm was successfully grown on silicon at 250 degrees C, using an arsenide beam flux, in a molecular beam epitaxy chamber. Based on the optical and electrical evaluation, this film appeared to have obvious poly-GaAs. Here, the measured the memory window by comparing it to a conventional device with a poly-Si floating gate, which showed it to have approximately twice the value of the poly-Si. Based on these results, poly-GaAs floating material can be considered to be a candidate for a wider memory window in scaled two-dimensional flash memory
URI
http://pubs.kist.re.kr/handle/201004/65008
ISSN
0013-5194
Appears in Collections:
KIST Publication > Article
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