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dc.contributor.author송진동-
dc.contributor.author노일표-
dc.contributor.authorKang, N. S.-
dc.contributor.authorShin, S. H.-
dc.contributor.authorOh, Y. T.-
dc.contributor.authorKim, K. B.-
dc.contributor.authorY.H. Song-
dc.date.accessioned2021-06-09T04:17:06Z-
dc.date.available2021-06-09T04:17:06Z-
dc.date.issued2016-05-
dc.identifier.citationVOL 52, NO 11-964-
dc.identifier.issn0013-5194-
dc.identifier.other47768-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/65008-
dc.description.abstractThe memory characteristics of a capacitor with polycrystalline gallium arsenide (poly-GaAs) as a floating gate material have been evaluated, and compared with a capacitor using poly-silicon (poly-Si). The poly-GaAs film with thickness of 100 nm was successfully grown on silicon at 250 degrees C, using an arsenide beam flux, in a molecular beam epitaxy chamber. Based on the optical and electrical evaluation, this film appeared to have obvious poly-GaAs. Here, the measured the memory window by comparing it to a conventional device with a poly-Si floating gate, which showed it to have approximately twice the value of the poly-Si. Based on these results, poly-GaAs floating material can be considered to be a candidate for a wider memory window in scaled two-dimensional flash memory-
dc.publisherElectronics letters-
dc.subjectGaAs-
dc.subjectGlass-
dc.subjectMemory-
dc.subjectpoly-crystal-
dc.subjectcapacitor-
dc.titleMemory characteristics of capacitors with poly-GaAs floating gates-
dc.typeArticle-
dc.relation.page963964-
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