The High-Resolution Nanostructuring of Si wafer Surface with 10 nm Scale Using a Combined Ion bombarding Technique and Chemical Reaction

Title
The High-Resolution Nanostructuring of Si wafer Surface with 10 nm Scale Using a Combined Ion bombarding Technique and Chemical Reaction
Authors
정현수전환진
Keywords
Nano structure; Silicon; secondary sputtering; high resolution
Issue Date
2016-11
Publisher
Macromolecular research
Citation
VOL 24, NO 11-1019
Abstract
We describe a highly efficient technique for nanostructuring silicon (Si) wafer surfaces with high-resolution (< 15 nm) and high aspect ratio (20) structures without any deposition processes. Our strategy is based on advanced secondary sputtering lithography (SSL), which combines physical and chemical plasma etching during an ion bombardment process. Compared with general SSL techniques using Ar gas only, the reactive radicals assisted the SSL and promoted the Si etching rate to simultaneously deposit the etched Si materials onto the side surface of a pre-patterned polymer. In addition, various three-dimensional Si nanostructure shapes could be developed simply by controlling the pre-patterned polymer, thereby providing a simple and versatile approach to customizing this technique
URI
http://pubs.kist.re.kr/handle/201004/65019
ISSN
1598-5032
Appears in Collections:
KIST Publication > Article
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