Surface states in a monolayer MoS2 transistor

Title
Surface states in a monolayer MoS2 transistor
Authors
이억재Zhongyuan LuJustin C WongSayeef Salahuddin
Issue Date
2016-04
Publisher
Journal of materials research
Citation
VOL 31, NO 7-916
Abstract
In this article, we have explored the interface states that form between the channel of a monolayer MoS2 transistor and a high-kappa gate dielectric. These interface states lead to large hysteresis in the drain current versus gate voltage characteristic or the so-called transfer characteristic of the transistor. By applying carefully designed pulses to the gate of the transistor, we show that it is possible to both understand the nature of the interface states and minimize the hysteresis, so that the transfer characteristic can be reliably used for subsequent extraction of material parameters such as mobility.
URI
http://pubs.kist.re.kr/handle/201004/65297
ISSN
0884-2914
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KIST Publication > Article
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