Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications
- Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications
- 이억재; Junbo Park; G. E. Rowlands; D. C. Ralph; R. A. Buhrman
- Issue Date
- Applied physics letters
- VOL 105, NO 10-102404-5
- We model, using the macrospin approximation, the magnetic reversal of a perpendicularly magnetized nanostructured free layer formed on a normal, heavy-metal nanostrip, subjected to spin-orbit torques (SOTs) generated by short (<= 0.5 ns) current pulses applied to the nanostrip, to examine the potential for SOT-based fast, efficient cryogenic memory. Due to thermal fluctuations, if solely an anti-damping torque is applied, then, for a device with sufficiently low anisotropy (H-anis(0)similar to 1 kOe) suitable for application in cryogenic memory, a high magnetic damping parameter (alpha similar to 0.1 - 0.2) is required for reliable switching over a significant variation of pulse current. The additional presence of a substantial field-like torque improves switching reliability even for low damping (alpha <= 0.03).
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