Interfacial Band-Edge Engineered TiO2 Protection Layer on Cu2O Photocathodes for Efficient Water Reduction Reaction
- Interfacial Band-Edge Engineered TiO2 Protection Layer on Cu2O Photocathodes for Efficient Water Reduction Reaction
- 장호성; 최재석; 송준태; 최민재; 심동민; 임순민; 임훈희; 정연식; 오지훈
- water splitting; photoelectrode; Cu2O; TiO2
- Issue Date
- Electronic materials letters
- VOL 13, NO 1-65
- Photoelectrochemical (PEC) water splitting has emerged as a potential pathway to produce sustainable and renewable chemical fuels. Here, we present a highly active Cu2O/TiO2 photocathode for H2 production by enhancing the interfacial band-edge energetics of the TiO2 layer, which is realized by controlling the fixed charge density of the TiO2 protection layer. The band-edge engineered Cu2O/TiO2 (where TiO2 was grown at 80 °C via atomic layer deposition) enhances the photocurrent density up to − 2.04 mA/cm2 at 0 V vs. RHE under 1 sun illumination, corresponding to about a 1,200% enhancement compared to the photocurrent density of the photocathode protected with TiO2 grown at 150 °C. Moreover, band-edge engineering of the TiO2 protection layer prevents electron accumulation at the TiO2 layer and enhances both the Faraday efficiency and the stability for hydrogen production during the PEC water reduction reaction. This facile control over the TiO2/electrolyte interface will also provide new insight for designing highly efficient and stable protection layers for various other photoelectrodes such as Si, InP, and GaAs
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