Self-organized semiconductor nano-network on graphene

Title
Self-organized semiconductor nano-network on graphene
Authors
김태욱이상현배수강손다빈이승민김상진Jae-Wook Kang
Keywords
Graphene; ZnO; Self-organized; ALD
Issue Date
2017-03
Publisher
Nanotechnology
Citation
VOL 28, NO 14-145602-7
Abstract
A network structure consisting of nanomaterials with a stable structural support and charge path on a large area is desirable for various electronic and optoelectronic devices. Generally, network structures have been fabricated via two main strategies: (1) assembly of pre-grown nanostructures onto a desired substrate and (2) direct growth of nanomaterials onto a desired substrate. In this study, we utilized the surface defects of graphene to form a nano-network of ZnO via atomic layer deposition (ALD). The surface of pure and structurally perfect graphene is chemically inert. However, various types of point and line defects, including vacancies/adatoms, grain boundaries, and ripples in graphene are generated by growth, chemical or physical treatments. The defective sites enhance the chemical reactivity with foreign atoms. ZnO nanoparticles formed by ALD were predominantly deposited at the line defects and agglomerated with increasing ALD cycles. Due to the formation of the ZnO nano-network, the photocurrent between two electrodes was clearly changed under UV irradiation as a result of the charge transport between ZnO and graphene. The line patterned ZnO/graphene (ZnO/G) nanonetwork devices exhibit sensitivities greater than ten times those of non-patterned structures. We also confirmed the superior operation of a fabricated flexible photodetector based on the line patterned ZnO/G nano-network.
URI
http://pubs.kist.re.kr/handle/201004/65490
ISSN
0957-4484
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KIST Publication > Article
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