Critical bending radius of thin single-crystalline silicon with dome and pyramid surface texturing
- Critical bending radius of thin single-crystalline silicon with dome and pyramid surface texturing
- 김인호; 우정현; 김영천; 김시훈; 장재일; 한흥남; 최경진; 김주영
- Surface modification; Bending test; Solar cells; Finite element analysis; Stress concentration
- Issue Date
- Scripta materialia
- VOL 140-4
- Four-point bending tests are performed on 50-μm-thick single-crystalline silicon (Si) wafers with dome- and pyramid-shaped surface patterns, which are used as flexible Si solar cells. Surface patterns, which act as stress concentrators, reduce the flexural strengths, leading to larger critical bending radius. The critical bending radii of surface-textured Si are much smaller than the calculated values for a single-notch geometry. The finite element analysis shows that the stress concentrations at the tips of the surface patterns effectively disperse in fine and periodic dome and irregular pyramid patterns.
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