Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures
- Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures
- 김진상; 최지원; 강종윤; 김혜령; 백승협; 김성근; 편정준; 백인환; 송영근; Taek-Mo Chung; Cheol Seong Hwang; Jeong Hwan Han
- SnS; ALD; transistor
- Issue Date
- Chemistry of materials
- VOL 29, NO 19-8110
- Two-dimensional (2-D) metal chalcogenides have received great attention because of their unique properties, which are different from bulk materials. A challenge in implementing 2-D metal chalcogenides in emerging devices is to prepare a well-crystallized layer over large areas at temperatures compatible with current fabrication processes. Tin monosulfide, a p-type layered semiconductor with a high hole mobility, is a promising candidate for realizing large-area growth at low temperatures because of its low melting point. However, tin sulfides exist in two notable crystalline phases, SnS and SnS2. Therefore, it is imperative to control the oxidation state of Sn to achieve a pure SnS film. Here, the synthesis of SnS thin films by atomic-layer-deposition (ALD) is demonstrated using bis(1-dimethylamino-2-methyl-2-propoxy)tin(II) and H2S as Sn and S sources, respectively, over a wide temperature window (90-240 degrees C). Impurities such as carbon, oxygen, and nitrogen were negligibly detected. The morphological evolution of plate-like orthorhombic SnS grains was observed above 210 degrees C. Moreover, properties of thin film transistors and gas sensors using SnS films as the active layers were investigated. The SnS ALD process would provide promising opportunities to exploit the intriguing properties of the 2-D metal chalcogenides for realizing emerging electronic devices.
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