Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD

Title
Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD
Authors
민병권박성근박효민김동섭남정균양정엽이동호김경남박세진김성택서동철김동환이해석강윤묵
Keywords
silicon solar cells; PECVD
Issue Date
2017-04
Publisher
Current applied physics
Citation
VOL 17, NO 4-521
Abstract
Silicon oxynitride (SiON) could be used in combination with silicon nitride (SiN) to form a multilayer anti -reflection coating on the front side of selective emitter solar cells.In this study, these double anti -reflection layers were fabricated by a continuous deposition technique using the plasma enhanced chemical vapor deposition method. We attempted to determine whether this method is fast and cost effective and can achieve higher efficiency for solar cell manufacture. The results show that the short circuit current density for the double layer anti -reflection Coating on selective emitter solar cells was higher by 0.5 mA/cm(2) compared to the single layer coating owing to the improved optical reflectance. The incorporation of a SiN/SiON stack into the anti -reflection layer of the CZ selective emitter solar cells yields an energy conversion efficiency of 19.4%, which is higher than the efficiency (19.18%) for the reference solar cells with single layer SiN anti -reflection coating.
URI
http://pubs.kist.re.kr/handle/201004/66418
ISSN
1567-1739
Appears in Collections:
KIST Publication > Article
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