Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

Title
Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide
Authors
김성근이우철Seung Min LeeJung Hwan YumEric S. LarsenChristopher W. BielawskiJungwoo Oh
Keywords
silicon-on-insulator; Beryllium oxide; Atomic layer deposition
Issue Date
2017-10
Publisher
Scientific Reports
Citation
VOL 7, 13205
Abstract
Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.
URI
http://pubs.kist.re.kr/handle/201004/66423
ISSN
2045-2322
Appears in Collections:
KIST Publication > Article
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