GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

Title
GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications
Authors
송진동구현철박윤호YunHeub SongSangHoon Shin
Keywords
GaSb; InGaAs; Hole gas; InP; type-2
Issue Date
2017-07
Publisher
Current applied physics
Citation
VOL 17, NO 7-1008
Abstract
We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm(2)/Vs and high carrier concentration of 4.3 x 10(12)/cm(2) at RT.
URI
http://pubs.kist.re.kr/handle/201004/66433
ISSN
1567-1739
Appears in Collections:
KIST Publication > Article
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