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dc.contributor.author송진동-
dc.contributor.author구현철-
dc.contributor.author박윤호-
dc.contributor.authorYunHeub Song-
dc.contributor.authorSangHoon Shin-
dc.date.accessioned2021-06-09T04:18:44Z-
dc.date.available2021-06-09T04:18:44Z-
dc.date.issued2017-07-
dc.identifier.citationVOL 17, NO 7-1008-
dc.identifier.issn1567-1739-
dc.identifier.other49617-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/66433-
dc.description.abstractWe grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm(2)/Vs and high carrier concentration of 4.3 x 10(12)/cm(2) at RT.-
dc.publisherCurrent applied physics-
dc.subjectGaSb-
dc.subjectInGaAs-
dc.subjectHole gas-
dc.subjectInP-
dc.subjecttype-2-
dc.titleGaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications-
dc.typeArticle-
dc.relation.page10051008-
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