Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures
- Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures
- 송진동; Il-Wook Cho; Mee-Yi Ryu
- GaP; Quantum structure; photoluminescence; lateral composition modulation
- Issue Date
- Journal of the Korean Physical Society
- VOL 70, NO 8-790
- The optical properties of InP/InGaP quantum structures (QSs) grown by using a migrationenhanced molecular beam epitaxy method have been investigated using temperature (T)-dependent photoluminescence (PL) and time-resolved PL. InP QSs were grown by varying the growth temperature from 440 A degrees C to 520 A degrees C. InP/InGaP QS samples grown at temperatures of 440 A degrees C - 480 A degrees C show typical characteristics of a QS, such as rapid bandgap shrinkage at high T and enhanced PL lifetime at low T while the sample grown at 520 A degrees C exhibits the properties of bulk InP. The growth temperature is found to determine the formation of the InP/InGaP QSs; thus, it significantly affects the structural and the optical properties of the InP/InGaP QSs. The best luminescence properties are demonstrated by the sample grown at 460 A degrees C, indicating an optimum growth temperature of 460 A degrees C.
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