Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures

Title
Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures
Authors
송진동Il-Wook ChoMee-Yi Ryu
Keywords
GaP; Quantum structure; photoluminescence; lateral composition modulation
Issue Date
2017-04
Publisher
Journal of the Korean Physical Society
Citation
VOL 70, NO 8-790
Abstract
The optical properties of InP/InGaP quantum structures (QSs) grown by using a migrationenhanced molecular beam epitaxy method have been investigated using temperature (T)-dependent photoluminescence (PL) and time-resolved PL. InP QSs were grown by varying the growth temperature from 440 A degrees C to 520 A degrees C. InP/InGaP QS samples grown at temperatures of 440 A degrees C - 480 A degrees C show typical characteristics of a QS, such as rapid bandgap shrinkage at high T and enhanced PL lifetime at low T while the sample grown at 520 A degrees C exhibits the properties of bulk InP. The growth temperature is found to determine the formation of the InP/InGaP QSs; thus, it significantly affects the structural and the optical properties of the InP/InGaP QSs. The best luminescence properties are demonstrated by the sample grown at 460 A degrees C, indicating an optimum growth temperature of 460 A degrees C.
URI
http://pubs.kist.re.kr/handle/201004/66435
ISSN
0374-4884
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