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dc.contributor.author송진동-
dc.contributor.authorIl-Wook Cho-
dc.contributor.authorMee-Yi Ryu-
dc.date.accessioned2021-06-09T04:18:44Z-
dc.date.available2021-06-09T04:18:44Z-
dc.date.issued2017-04-
dc.identifier.citationVOL 70, NO 8-790-
dc.identifier.issn0374-4884-
dc.identifier.other49618-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/66435-
dc.description.abstractThe optical properties of InP/InGaP quantum structures (QSs) grown by using a migrationenhanced molecular beam epitaxy method have been investigated using temperature (T)-dependent photoluminescence (PL) and time-resolved PL. InP QSs were grown by varying the growth temperature from 440 A degrees C to 520 A degrees C. InP/InGaP QS samples grown at temperatures of 440 A degrees C - 480 A degrees C show typical characteristics of a QS, such as rapid bandgap shrinkage at high T and enhanced PL lifetime at low T while the sample grown at 520 A degrees C exhibits the properties of bulk InP. The growth temperature is found to determine the formation of the InP/InGaP QSs-
dc.description.abstractthus, it significantly affects the structural and the optical properties of the InP/InGaP QSs. The best luminescence properties are demonstrated by the sample grown at 460 A degrees C, indicating an optimum growth temperature of 460 A degrees C.-
dc.publisherJournal of the Korean Physical Society-
dc.subjectGaP-
dc.subjectQuantum structure-
dc.subjectphotoluminescence-
dc.subjectlateral composition modulation-
dc.titleLuminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures-
dc.typeArticle-
dc.relation.page785790-
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