Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors

Title
Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors
Authors
이현정김성근이우철변혜현김원빈김웅
Keywords
Biofabrication; Field-effect transistors; local bottom-gate geometry; single-walled carbon nanotubes; M13 phage; nanomesh
Issue Date
2017-01
Publisher
Nanotechnology
Citation
VOL 28, NO 2-025304-9
Abstract
Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and I on/I off ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.
URI
http://pubs.kist.re.kr/handle/201004/66568
ISSN
0957-4484
Appears in Collections:
KIST Publication > Article
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