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dc.contributor.author이승기-
dc.contributor.authorSangmoon Han-
dc.contributor.authorIlgyu Choi-
dc.contributor.authorKwanjae Lee-
dc.contributor.authorcheul-ro Lee-
dc.contributor.authorJeongwoo Hwang-
dc.contributor.authorDong chul Chung-
dc.contributor.authorJin soo Kim-
dc.date.accessioned2021-06-09T04:19:01Z-
dc.date.available2021-06-09T04:19:01Z-
dc.date.issued2018-02-
dc.identifier.citationVOL 47, NO 2-948-
dc.identifier.issn0361-5235-
dc.identifier.other49745-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/66684-
dc.description.abstractWe report on the dependence of internal crystal structures on the electrical properties of a catalyst-free and undoped InAs nanowire (NW) formed on a Si(111) substrate by metal&#8211-
dc.description.abstractorganic chemical vapor deposition. Cross-sectional transmission electron microscopy images, obtained from four different positions of a single InAs NW, indicated that the wurtzite (WZ) structure with stacking faults was observed mostly in the bottom region of the NW. Vertically along the InAs NW, the amount of stacking faults decreased and a zinc-blende (ZB) structure was observed. At the top of the NW, the ZB structure was prominently observed. The resistance and resistivity of the top region of the undoped InAs NW with the ZB structure were measured to be 121.5 kΩ and 0.19 Ω cm, respectively, which are smaller than those of the bottom region with the WZ structure, i.e., 251.8 kΩ and 0.39 Ω cm, respectively. The reduction in the resistance of the top region of the NW is attributed to the improvement in the crystal quality and the change in the ZB crystal structure. For a field effect transistor with an undoped InAs NW channel, the drain current versus drain&#8211-
dc.description.abstractsource voltage characteristic curves under various negative gate&#8211-
dc.description.abstractsource voltages were successfully observed at room temperature.-
dc.publisherJournal of electronic materials-
dc.subjectInAs-
dc.subjectnanowire-
dc.subjectstructural properties-
dc.subjectelectrical properties-
dc.subjectfield-effect transistor-
dc.titleDependence of Internal Crystal Structures of InAs Nanowires on Electrical Characteristics of Field Effect Transistors-
dc.typeArticle-
dc.relation.page944948-
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