Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
- Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
- 이상윤; Marina Radulask; Matthias Widmann; Matthias Niethammer; Jingyuan Linda Zhang; Torsten Rendler; Konstantinos G Lagoudakis; Nguyen Tien Son; Erik Janzen; Takeshi Ohshima; Joerg Wrachtrup; Jelena Vuckovic
- Color center; silicon carbide; photonics; spintronics; nanopillars; spin-qubits
- Issue Date
- Nano letters
- VOL 17, NO 3-1786
- Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum phtonics architecture relying on single photon sources and qubits.
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