In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs

Title
In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs
Authors
전대영Tim BaldaufSo Jeong ParkSebastian PreglLarysa BarabanGianaurelio CunibertiThomas MikolajickWalter M. Weber
Keywords
Schottky-barrier transistors; TCAD; ambipolar behavior; activation energy map; IV contour map; operation mechanism; transconductance
Issue Date
2017-09
Publisher
Solid-State Device Research Conference (ESSDERC)
Citation
-307
URI
http://pubs.kist.re.kr/handle/201004/66824
ISSN
2378-6558
Appears in Collections:
KIST Publication > Conference Paper
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