Less surface roughness scattering effects in highly doped Si-channel and ambipolar conduction behavior with Schottky-barrier contacts

Title
Less surface roughness scattering effects in highly doped Si-channel and ambipolar conduction behavior with Schottky-barrier contacts
Authors
전대영So Jeong ParkGyu-Tae KimGerard GhibaudoSebastian PreglThomas MikolajickWalter M. Weber
Keywords
Scattering; Junctionless transistors; ambipolar conduction; Schottky-barrier; I-V maps
Issue Date
2017-06
Publisher
ICASS2017
URI
http://pubs.kist.re.kr/handle/201004/66825
Appears in Collections:
KIST Publication > Conference Paper
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