Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
- Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
- 손동희; 구자훈; 송준걸; 김재민; 이민철; 심형준; 박민준; 이민백; 김지훈; 김대형
- carbon nanotubes; charge-trap floating-gate memory; logic gates; stretchable electronics; wearable electronics
- Issue Date
- ACS Nano
- VOL 9, NO 5-5593
- Electronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches.
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