Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture

Title
Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture
Authors
김종식Jong Cheol KimJinhyung LeeRajiv K. SinghPuneet JawaliGhatu SubhashHaigun LeeArul Chakkaravarthi Arjunan
Keywords
GaN on diamond; Spark plasma sintering; Direct bonding; Heat dissipation; Immiscibility between Ga and C
Issue Date
2018-01
Publisher
Scripta materialia
Citation
VOL 142-142
Abstract
This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions.
URI
http://pubs.kist.re.kr/handle/201004/67072
ISSN
1359-6462
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE