Reconfigurable Si Nanowire Nonvolatile Transistors
- Reconfigurable Si Nanowire Nonvolatile Transistors
- 전대영; So Jeong Park; Sabrina Piontek; Matthias Grube; Johannes Ocker; Violetta Sessi; Andre Heinzig; Jens Trommer; Gyu-Tae Kim; Thomas Mikolajick; Walter M. Weber
- intrinsic silicon nanowires; nonvolatile transistors; reconfigurable field effect transistors; reconfigurable memory; Schottky barrier
- Issue Date
- Advanced electronic materials
- VOL 4, NO 1, 1700399
- Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.
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