Reconfigurable Si Nanowire Nonvolatile Transistors

Title
Reconfigurable Si Nanowire Nonvolatile Transistors
Authors
전대영So Jeong ParkSabrina PiontekMatthias GrubeJohannes OckerVioletta SessiAndre HeinzigJens TrommerGyu-Tae KimThomas MikolajickWalter M. Weber
Keywords
intrinsic silicon nanowires; nonvolatile transistors; reconfigurable field effect transistors; reconfigurable memory; Schottky barrier
Issue Date
2018-01
Publisher
Advanced electronic materials
Citation
VOL 4, NO 1, 1700399
Abstract
Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.
URI
http://pubs.kist.re.kr/handle/201004/67127
ISSN
2199-160X
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE