Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN substrates

Title
Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN substrates
Authors
김성근이우철Seung Min LeeJung Hwan YumSeonno YoonEric S. LarsenShahab ShervinWeijie WangJae-Hyun RyouChristopher W. BielawskiJungwoo Oh
Keywords
atomic layer deposition; BeO; GaN
Issue Date
2017-12
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 9, NO 48-41979
Abstract
We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO has a higher thermal conductivity, bandgap energy, and dielectric constant than SiO2. As an electrical insulator, diamond is the only material on earth whose thermal conductivity exceeds that of BeO. Despite these advantages, there is no chemical-vapor-deposition technique for BeO-thin-film deposition, and thus, it is not used in nanoscale-semiconductor-device processing. In this study, the BeO thin films grown on a GaN substrate with a single crystal showed excellent interface and thermal stability. Transmission electron microscopy showed clear diffraction patterns, and the Raman shifts associated with soft phonon modes verified the high thermal conductivity. The X-ray scan confirmed the out-of-plane single-crystal growth direction and the in-plane, 6-fold, symmetrical wurtzite structure. Single-crystalline BeO was grown on GaN despite the large lattice mismatch, which suggested a model that accommodated the strain of hexagonal-on-hexagonal epitaxy with 5/6 and 6/7 domain matching. BeO has a good dielectric constant and good thermal conductivity, bandgap energy, and single-crystal characteristics, so it is suitable for the gate dielectric of power semiconductor devices. The capacitance-voltage (C-V) results of BeO on a GaN-metal-oxide semiconductor exhibited low frequency dispersion, hysteresis, and interface-defect density.
URI
http://pubs.kist.re.kr/handle/201004/67167
ISSN
1944-8244
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