Vertical Si Nanowire Arrays Fabricated by Magnetically Guided Metal-Assisted Chemical Etching

Title
Vertical Si Nanowire Arrays Fabricated by Magnetically Guided Metal-Assisted Chemical Etching
Authors
천동원Tae Kyoung KimDuyoung ChoiElizabeth CaldwellYoung Jin KimJae Cheol PaikSungho JinRenkun Chen
Keywords
magnetically guided etching; metal-assisted chemical etching; Si nanowire; anodic aluminum oxide; nano-patterning
Issue Date
2016-11
Publisher
Nanotechnology
Citation
VOL 27, NO 45-455302-7
Abstract
In this work, vertically aligned Si nanowire arrays were fabricated by magnetically guided metal-assisted directional chemical etching. Using an anodized aluminum oxide template as a shadow mask, nanoscale Ni dot arrays were fabricated on an Si wafer to serve as a mask to protect the Si during the etching. For the magnetically guided chemical etching, we deposited a tri-layer metal catalyst (Au/Fe/Au) in a Swiss-cheese configuration and etched the sample under the magnetic field to improve the directionality of the Si nanowire etching and increase the etching rate along the vertical direction. After the etching, the nanowires were dried with minimal surface-tension-induced aggregation by utilizing a supercritical CO2 drying procedure. High-resolution transmission electron microscopy (HR-TEM) analysis confirmed the formation of single-crystal Si nanowires. The method developed here for producing vertically aligned Si nanowire arrays could find a wide range of applications in electrochemical and electronic devices.
URI
http://pubs.kist.re.kr/handle/201004/67316
ISSN
0957-4484
Appears in Collections:
KIST Publication > Article
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