Series resistance in different operation regime of junctionless transistors

Title
Series resistance in different operation regime of junctionless transistors
Authors
전대영So Jeong ParkMireille MouisSylvain BarraudGyu-Tae KimGerard Ghibaudo
Keywords
Junctionless transistors; temperature dependence; Series resistance; Bulk channel; Accumulation channel; Numerical simulation
Issue Date
2018-03
Publisher
Solid-state electronics
Citation
VOL 141-95
Abstract
Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel.
URI
http://pubs.kist.re.kr/handle/201004/67322
ISSN
0038-1101
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE