Effects of an In Vacancy on Local Distortion of Fast Phase Transition in Bi doped In3SbTe2

Title
Effects of an In Vacancy on Local Distortion of Fast Phase Transition in Bi doped In3SbTe2
Authors
김용태김승철최희채Minho ChoiJinho Ahn
Keywords
Fast phase transition; PCRAM; In vacancy; Distortion; Bi doping
Issue Date
2017-12
Publisher
Journal of the Korean Physical Society
Citation
VOL 71, NO 12-949
Abstract
Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy (V-In(3-)) and higher concentration of the V-In(3) in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V-In(3-) and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages.
URI
http://pubs.kist.re.kr/handle/201004/67338
ISSN
0374-4884
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KIST Publication > Article
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