Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

Title
Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory
Authors
김성근Sungyeon RyuByung Joon Choi
Keywords
Resistive switching; Ta2O5
Issue Date
2018-01
Publisher
Journal of electronic materials
Citation
VOL 47, NO 1-166
Abstract
To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 mu A) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s.
URI
http://pubs.kist.re.kr/handle/201004/67383
ISSN
0361-5235
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KIST Publication > Article
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